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| HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345. Features * >100kHz Operation At 390V, 30A * 200kHz Operation At 390V, 18A * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at TJ = 125oC * Low Conduction Loss * Temperature Compensating SABERTM Model www.fairchildsemi.com Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG30N60A4D NOTE: PACKAGE TO-247 BRAND 30N60A4D COLLECTOR (FLANGE) When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B HGTG30N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60A4D, 600 75 60 240 20 30 150A at 600V 463 3.7 -55 to 150 260 UNITS V A A A V V W W/oC oC oC Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications PARAMETER TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF VEC trr IEC = 30A IEC = 30A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s IGBT and Diode at TJ = 125oC, ICE = 30A, VCE = 390V, VGE = 15V, RG = 3, L = 200H, Test Circuit (Figure 24) TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V IC = 30A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 4.5 150 TYP 1.8 1.6 5.2 8.5 225 300 25 12 150 38 280 600 240 24 11 180 58 280 1000 450 2.2 40 30 MAX 250 2.8 2.6 2.0 7.0 250 270 360 350 200 70 1200 750 2.5 55 42 UNITS V A mA V V V nA A V nC nC ns ns ns ns J J J ns ns ns ns J J J V ns ns Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge IC = 250A, VCE = 600V VGE = 20V TJ = 150oC, RG = 3, VGE = 15V, L = 100H, VCE = 600V IC = 30A, VCE = 300V IC = 30A, VCE = 300V VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time IGBT and Diode at TJ = 25oC, ICE = 30A, VCE = 390V, VGE = 15V, RG = 3, L = 200H, Test Circuit (Figure 24) (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B HGTG30N60A4D Electrical Specifications PARAMETER Thermal Resistance Junction To Case TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL RJC IGBT Diode NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS MIN TYP MAX 0.27 0.65 UNITS oC/W oC/W Typical Performance Curves 60 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 200 TJ = 150oC, RG = 3, VGE = 15V, L = 500H 150 100 50 0 0 100 200 300 400 500 600 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700 FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (s) fMAX, OPERATING FREQUENCY (kHz) TC 300 75oC VGE 15V VCE = 390V, RG = 3, TJ = 125oC 16 14 12 10 8 tSC 6 4 10 300 200 ISC 800 700 600 500 400 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.27oC/W, SEE NOTES TJ = 125oC, RG = 3, L = 200H, V CE = 390V 30 3 10 30 60 11 12 13 14 15 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B ISC, PEAK SHORT CIRCUIT CURRENT (A) 500 18 900 HGTG30N60A4D Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 50 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 40 40 30 30 20 TJ = 125oC TJ = 150oC TJ = 25oC 20 TJ = 125oC 10 TJ = 150oC TJ = 25oC 10 0 0 0.5 1.0 1.5 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.5 0 0 0.5 1.0 1.5 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.5 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3500 EON2 , TURN-ON ENERGY LOSS (J) 3000 2500 2000 1500 1000 500 0 EOFF , TURN-OFF ENERGY LOSS (J) RG = 3, L = 200H, VCE = 390V 1400 RG = 3, L = 200H, VCE = 390V 1200 1000 800 TJ = 125oC, VGE = 12V OR 15V 600 400 200 0 TJ = 25oC, VGE = 12V OR 15V 0 10 20 30 40 50 60 TJ = 125oC, VGE = 12V, VGE = 15V TJ = 25oC, VGE = 12V, VGE = 15V 0 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 34 td(ON)I, TURN-ON DELAY TIME (ns) 32 30 28 26 24 22 20 RG = 3, L = 200H, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 12V 100 RG = 3, L = 200H, VCE = 390V 80 trI , RISE TIME (ns) TJ = 125oC, VGE = 15V, VGE = 12V 60 TJ = 25oC, VGE = 12V 40 TJ = 25oC, TJ = 125oC, VGE = 15V 20 TJ = 25oC, VGE = 15V 0 60 0 10 20 30 40 50 60 0 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B HGTG30N60A4D Typical Performance Curves 220 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 200H, VCE = 390V 200 VGE = 12V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) 60 TJ = 125oC, VGE = 12V OR 15V 50 Unless Otherwise Specified (Continued) 70 RG = 3, L = 200H, VCE = 390V 180 160 40 TJ = 25oC, VGE = 12V OR 15V 30 140 VGE = 12V, VGE = 15V, TJ = 25oC 120 0 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 0 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 350 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V 300 PULSE DURATION = 250s TJ = 25oC 250 200 TJ = 125oC 150 100 50 0 6 7 8 9 10 11 VGE, GATE TO EMITTER VOLTAGE (V) 12 TJ = -55oC 15.0 12.5 IG(REF) = 1mA, RL = 15, TJ = 25oC VCE = 600V 10.0 7.5 5.0 2.5 0 VCE = 400V VCE = 200V 0 50 100 150 200 250 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) FIGURE 14. GATE CHARGE WAVEFORMS 5 RG = 3, L = 200H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 20 4 ICE = 60A TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 16 3 12 2 ICE = 30A 1 ICE = 15A 8 ICE = 60A 4 ICE = 30A ICE = 15A 0 3 10 100 RG, GATE RESISTANCE () 300 0 25 50 125 75 100 TC , CASE TEMPERATURE (oC) 150 FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B HGTG30N60A4D Typical Performance Curves 10 FREQUENCY = 1MHz Unless Otherwise Specified (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.3 2.2 2.1 2.0 1.9 1.8 1.7 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s, TJ = 25oC C, CAPACITANCE (nF) 8 6 CIES 4 ICE = 60A ICE = 30A ICE = 15A 2 COES CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 35 IEC , FORWARD CURRENT (A) 30 25 125oC 20 15 10 5 0 25oC DUTY CYCLE < 0.5%, PULSE DURATION = 250s trr , RECOVERY TIMES (ns) 100 90 80 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) 125oC tb 25oC ta 25oC tb 125oC ta 25oC trr dIEC/dt = 200A/s 125oC trr FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT Qrr , REVERSE RECOVERY CHARGE (nC) 60 50 40 30 20 25oC tb 10 0 200 125oC tb 25oC ta 125oC ta IEC = 30A, VCE = 390V 1400 1200 1000 800 600 400 200 0 200 VCE = 390V 125oC, IEC = 30A trr , RECOVERY TIMES (ns) 125oC, IEC = 15A 25oC, IEC = 30A 25oC, IEC = 15A 300 400 500 600 700 800 900 1000 300 400 500 600 700 800 900 1000 dIEC/dt, RATE OF CHANGE OF CURRENT (A/s) dIEC/dt, RATE OF CHANGE OF CURRENT (A/s) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B HGTG30N60A4D Typical Performance Curves ZJC , NORMALIZED THERMAL RESPONSE Unless Otherwise Specified (Continued) 100 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE 10-4 10-3 10-2 10-1 100 101 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t1 10-1 10-2 -5 10 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP30N60A4D DIODE TA49373 90% VGE L = 200H VCE RG = 3 DUT + ICE VDD = 390V 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B HGTG30N60A4D Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). (c)2001 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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